Microsemi Corporation APTM100H45FT3G
Product Information
FET Feature:
Standard
Rds On (Max) @ Id, Vgs:
540mOhm @ 9A, 10V
Detailed Description:
Mosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 18A 357W Chassis Mount SP3
Input Capacitance (Ciss) (Max) @ Vds:
4350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
154nC @ 10V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
5V @ 2.5mA
Drain to Source Voltage (Vdss):
1000V (1kV)
Package / Case:
SP3
Supplier Device Package:
SP3
Manufacturer Standard Lead Time:
36 Weeks
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
4 N-Channel (H-Bridge)
Power - Max:
357W
Current - Continuous Drain (Id) @ 25°C:
18A
Manufacturer:
Microsemi Corporation
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FAQs
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You can order Microsemi Corporation brand products with APTM100H45FT3G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Arrays category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET10319535 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10319535.
Yes. We ship APTM100H45FT3G Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APTM100H45FT3G. The FET features of the product include standard. It has a maximum Rds On and voltage of 540mohm @ 9a, 10v. It features mosfet array 4 n-channel (h-bridge) 1000v (1kv) 18a 357w chassis mount sp3. The product's input capacitance at maximum includes 4350pf @ 25v. The maximum gate charge and given voltages include 154nc @ 10v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. The product has a 1000v (1kv) drain to source voltage. Moreover, the product comes in sp3. sp3 is the supplier device package value. It has typical 36 weeks of manufacturer standard lead time. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 4 n-channel (h-bridge). The maximum power of the product is 357w. The continuous current drain at 25°C is 18a. The microsemi corporation's product offers user-desired applications.
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