Microsemi Corporation APTC80H29SCTG
Product Information
FET Feature:
Standard
Rds On (Max) @ Id, Vgs:
290mOhm @ 7.5A, 10V
Detailed Description:
Mosfet Array 4 N-Channel (H-Bridge) 800V 15A 156W Chassis Mount SP4
Input Capacitance (Ciss) (Max) @ Vds:
2254pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
91nC @ 10V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
3.9V @ 1mA
Drain to Source Voltage (Vdss):
800V
Package / Case:
SP4
Supplier Device Package:
SP4
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
4 N-Channel (H-Bridge)
Power - Max:
156W
Current - Continuous Drain (Id) @ 25°C:
15A
Manufacturer:
Microsemi Corporation
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FAQs
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Yes. We ship APTC80H29SCTG Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APTC80H29SCTG. The FET features of the product include standard. It has a maximum Rds On and voltage of 290mohm @ 7.5a, 10v. It features mosfet array 4 n-channel (h-bridge) 800v 15a 156w chassis mount sp4. The product's input capacitance at maximum includes 2254pf @ 25v. The maximum gate charge and given voltages include 91nc @ 10v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 3.9v @ 1ma. The product has a 800v drain to source voltage. Moreover, the product comes in sp4. sp4 is the supplier device package value. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 4 n-channel (h-bridge). The maximum power of the product is 156w. The continuous current drain at 25°C is 15a. The microsemi corporation's product offers user-desired applications.
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