Microsemi Corporation APTM120A20SG
Product Information
FET Feature:
Standard
Rds On (Max) @ Id, Vgs:
240mOhm @ 25A, 10V
Detailed Description:
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 50A 1250W Chassis Mount SP6
Input Capacitance (Ciss) (Max) @ Vds:
15200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
600nC @ 10V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
5V @ 6mA
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Package / Case:
SP6
Supplier Device Package:
SP6
Manufacturer Standard Lead Time:
36 Weeks
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Half Bridge)
Power - Max:
1250W
Current - Continuous Drain (Id) @ 25°C:
50A
Manufacturer:
Microsemi Corporation
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FAQs
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Yes. We ship APTM120A20SG Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APTM120A20SG. The FET features of the product include standard. It has a maximum Rds On and voltage of 240mohm @ 25a, 10v. It features mosfet array 2 n-channel (half bridge) 1200v (1.2kv) 50a 1250w chassis mount sp6. The product's input capacitance at maximum includes 15200pf @ 25v. The maximum gate charge and given voltages include 600nc @ 10v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 5v @ 6ma. The product has a 1200v (1.2kv) drain to source voltage. Moreover, the product comes in sp6. sp6 is the supplier device package value. It has typical 36 weeks of manufacturer standard lead time. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (half bridge). The maximum power of the product is 1250w. The continuous current drain at 25°C is 50a. The microsemi corporation's product offers user-desired applications.
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