Microsemi Corporation APTM50HM75SCTG
Product Information
FET Feature:
Silicon Carbide (SiC)
Rds On (Max) @ Id, Vgs:
90mOhm @ 23A, 10V
Detailed Description:
Mosfet Array 4 N-Channel (H-Bridge) 500V 46A 357W Chassis Mount SP4
Input Capacitance (Ciss) (Max) @ Vds:
5590pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
123nC @ 10V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
5V @ 2.5mA
Drain to Source Voltage (Vdss):
500V
Package / Case:
SP4
Supplier Device Package:
SP4
Manufacturer Standard Lead Time:
36 Weeks
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
4 N-Channel (H-Bridge)
Power - Max:
357W
Current - Continuous Drain (Id) @ 25°C:
46A
Manufacturer:
Microsemi Corporation
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FAQs
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Yes. We ship APTM50HM75SCTG Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APTM50HM75SCTG. The FET features of the product include silicon carbide (sic). It has a maximum Rds On and voltage of 90mohm @ 23a, 10v. It features mosfet array 4 n-channel (h-bridge) 500v 46a 357w chassis mount sp4. The product's input capacitance at maximum includes 5590pf @ 25v. The maximum gate charge and given voltages include 123nc @ 10v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. The product has a 500v drain to source voltage. Moreover, the product comes in sp4. sp4 is the supplier device package value. It has typical 36 weeks of manufacturer standard lead time. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 4 n-channel (h-bridge). The maximum power of the product is 357w. The continuous current drain at 25°C is 46a. The microsemi corporation's product offers user-desired applications.
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