Microsemi Corporation APTMC170AM60CT1AG
Product Information
FET Feature:
Silicon Carbide (SiC)
Rds On (Max) @ Id, Vgs:
60mOhm @ 50A, 20V
Detailed Description:
Mosfet Array 2 N Channel (Phase Leg) 1700V (1.7kV) 50A (Tc) 350W Chassis Mount SP1
Input Capacitance (Ciss) (Max) @ Vds:
3080pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs:
190nC @ 20V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
2.3V @ 2.5mA (Typ)
Drain to Source Voltage (Vdss):
1700V (1.7kV)
Package / Case:
SP1
Supplier Device Package:
SP1
Manufacturer Standard Lead Time:
36 Weeks
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
2 N Channel (Phase Leg)
Power - Max:
350W
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Manufacturer:
Microsemi Corporation
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Yes. We ship APTMC170AM60CT1AG Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APTMC170AM60CT1AG. The FET features of the product include silicon carbide (sic). It has a maximum Rds On and voltage of 60mohm @ 50a, 20v. It features mosfet array 2 n channel (phase leg) 1700v (1.7kv) 50a (tc) 350w chassis mount sp1. The product's input capacitance at maximum includes 3080pf @ 1000v. The maximum gate charge and given voltages include 190nc @ 20v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 2.3v @ 2.5ma (typ). The product has a 1700v (1.7kv) drain to source voltage. Moreover, the product comes in sp1. sp1 is the supplier device package value. It has typical 36 weeks of manufacturer standard lead time. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n channel (phase leg). The maximum power of the product is 350w. The continuous current drain at 25°C is 50a (tc). The microsemi corporation's product offers user-desired applications.
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