NXP Semiconductors PBSS5620PA,115
Product Information
Current - Collector (Ic) (Max):
6 A
Voltage - Collector Emitter Breakdown (Max):
20 V
Operating Temperature:
150°C (TJ)
Package / Case:
3-PowerUDFN
DC Current Gain (hFE) (Min) @ Ic, Vce:
190 @ 2A, 2V
Frequency - Transition:
80MHz
Vce Saturation (Max) @ Ib, Ic:
350mV @ 300mA, 6A
REACH Status:
REACH Unaffected
Transistor Type:
PNP
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
3-HUSON (2x2)
Power - Max:
2.1 W
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FAQs
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET22372730 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "NXP Semiconductors" products on our website by using Enrgtech's Unique Manufacturing Part Number ET22372730.
Yes. We ship PBSS5620PA,115 Internationally to many countries around the world.
This is manufactured by NXP Semiconductors. The manufacturer part number is PBSS5620PA,115. The maximum collector current includes 6 a. The maximum collector emitter breakdown voltage of the product is 20 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 3-powerudfn. Furthermore, 190 @ 2a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 80mhz. The 350mv @ 300ma, 6a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na is the maximum current at collector cutoff. The product is available in surface mount configuration. 3-huson (2x2) is the supplier device package value. The maximum power of the product is 2.1 w.
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