The SMMBT5089LT1G by Onsemi is a high-geared NPN bipolar junction transistor (BJT) with reliable and efficient power amplification capabilities. Its low collector-emitter saturation voltage and compact size provide versatile performance in various electronic circuits and applications.
The ON Semiconductor SMMBT5089LT1G is a bipolar junction transistor (BJT) designed for various electronic applications. This NPN (negative-positive-negative) transistor offers a maximum voltage rating of 25 V and a current rating of 50 mA. With its small footprint and high-frequency capabilities, it is commonly used in low-power amplification and switching circuits. Its NPN configuration, voltage and current ratings, high-frequency capacity, and compact package make it suitable for various applications, including amplification, switching, oscillators, and wireless communication.
The SMMBT5089LT1G comes in a surface mount SOT-23-3 (TO-236) package. This small-outline transistor package features three pins, providing easy soldering and compatibility with automated assembly processes. The compact size of the SOT-23-3 package makes it suitable for space-constrained applications.
The Onsemi SMMBT5089LT1G: Key Specifications
Application Versatility of onsemi SMMBT5089LT1G:
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