onsemi BD810G
Product Information
Transistor Type:
PNP
Dimensions:
10.53 x 4.83 x 9.28mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
90 W
Maximum Collector Emitter Voltage:
80 V dc
Maximum Emitter Base Voltage:
5 V dc
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
10 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
80 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 4A, 2V
edacadModel:
BD810G Models
Frequency - Transition:
1.5MHz
Vce Saturation (Max) @ Ib, Ic:
1.1V @ 300mA, 3A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1476189
Transistor Type:
PNP
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
1mA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Power - Max:
90 W
Base Product Number:
BD810
ECCN:
EAR99
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FAQs
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You can order onsemi brand products with BD810G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of onsemi BD810G. You can also check on our website or by contacting our customer support team for further order details on onsemi BD810G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21507130 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21507130.
Yes. We ship BD810G Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is BD810G. The transistor is a pnp type. The given dimensions of the product include 10.53 x 4.83 x 9.28mm. The product is available in through hole configuration. Provides up to 90 w maximum power dissipation. Whereas features a 80 v dc of collector emitter voltage (max). It features a 5 v dc of maximum emitter base voltage. The package is a sort of to-220. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 10 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 80 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Furthermore, 15 @ 4a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 1.5mhz. The 1.1v @ 300ma, 3a is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 1ma (icbo) is the maximum current at collector cutoff. to-220 is the supplier device package value. The maximum power of the product is 90 w. Moreover, it corresponds to bd810, a base product number of the product. The product is designated with the ear99 code number.
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