onsemi 2N6667G PNP Darlington Transistor, 10 A 60 V HFE:1000, 3-Pin TO-220AB
Product Information
Minimum DC Current Gain:
1000
Transistor Type:
PNP
Dimensions:
10.28 x 4.82 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
65 W
Maximum Continuous Collector Current:
10 A
Maximum Collector Base Voltage:
60 V dc
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
4.5 V dc
Height:
15.75mm
Width:
4.82mm
Length:
10.28mm
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
3 V dc
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
10 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 5A, 3V
edacadModel:
2N6667G Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
3V @ 100mA, 10A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/918295
Transistor Type:
PNP - Darlington
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
1mA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Power - Max:
2 W
Base Product Number:
2N6667
ECCN:
EAR99
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FAQs
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This is PNP Darlington Transistor 10 A 60 V HFE:1000 3-Pin TO-220AB manufactured by onsemi. The manufacturer part number is 2N6667G. It features up to 1000 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 10.28 x 4.82 x 15.75mm. The product is available in through hole configuration. Provides up to 65 w maximum power dissipation. The product has a maximum 10 a continuous collector current . Additionally, it has 60 v dc maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). In addition, the product has a maximum 4.5 v dc base emitter saturation voltage . In addition, the height is 15.75mm. Furthermore, the product is 4.82mm wide. Its accurate length is 10.28mm. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. The product has a maximum 3 v dc collector emitter saturation voltage . It features a 5 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 10 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 60 v. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Furthermore, 1000 @ 5a, 3v is the minimum DC current gain at given voltage. The 3v @ 100ma, 10a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp - darlington type. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 1ma is the maximum current at collector cutoff. to-220 is the supplier device package value. The maximum power of the product is 2 w. Moreover, it corresponds to 2n6667, a base product number of the product. The product is designated with the ear99 code number.
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