ON Semiconductor 6385_2N2907A

ON Semiconductor

Product Information

Base Part Number:
2N2907
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 600mA 1W Through Hole TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1mA, 10V
Transistor Type:
PNP
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 50mA, 500mA
Supplier Device Package:
TO-18
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-206AA, TO-18-3 Metal Can
Current - Collector (Ic) (Max):
600mA
Current - Collector Cutoff (Max):
50nA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 6385_2N2907A. Base Part Number: 2n2907. It features bipolar (bjt) transistor pnp 60v 600ma 1w through hole to-18. Furthermore, 100 @ 1ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 1.6v @ 50ma, 500ma is the maximum Vce saturation. to-18 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 1w. Moreover, the product comes in to-206aa, to-18-3 metal can. The maximum collector current includes 600ma. In addition, 50na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mult Device EOL 19/May/2017(PCN Obsolescence/ EOL)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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