Microsemi IRE Division JANTXV2N2222AL
Product Information
Manufacturer Standard Lead Time:
23 Weeks
Current - Collector (Ic) (Max):
800mA
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Series:
Military, MIL-PRF-19500/255
Supplier Device Package:
TO-18 (TO-206AA)
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
500mW
Package / Case:
TO-206AA, TO-18-3 Metal Can
Current - Collector Cutoff (Max):
50nA
Manufacturer:
Microsemi IRE Division
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FAQs
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We accept all major payment methods for all products including ET18558947. Please check your shopping cart at the time of order.
You can order Microsemi IRE Division brand products with JANTXV2N2222AL directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi IRE Division JANTXV2N2222AL. You can also check on our website or by contacting our customer support team for further order details on Microsemi IRE Division JANTXV2N2222AL.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET18558947 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi IRE Division" products on our website by using Enrgtech's Unique Manufacturing Part Number ET18558947.
Yes. We ship JANTXV2N2222AL Internationally to many countries around the world.
This is manufactured by Microsemi IRE Division. The manufacturer part number is JANTXV2N2222AL. It has typical 23 weeks of manufacturer standard lead time. The maximum collector current includes 800ma. It features bipolar (bjt) transistor npn 50v 800ma 500mw through hole to-18 (to-206aa). Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 1v @ 50ma, 500ma is the maximum Vce saturation. The product military, mil-prf-19500/255, is a highly preferred choice for users. to-18 (to-206aa) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 500mw. Moreover, the product comes in to-206aa, to-18-3 metal can. In addition, 50na is the maximum current at collector cutoff. The microsemi ire division's product offers user-desired applications.
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