Microsemi IRE Division 2N3634L
Product Information
Manufacturer Standard Lead Time:
12 Weeks
Current - Collector (Ic) (Max):
1A
Detailed Description:
Bipolar (BJT) Transistor PNP 140V 1A 1W Through Hole TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 50mA, 10V
Transistor Type:
PNP
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 50mA
Supplier Device Package:
TO-5
Voltage - Collector Emitter Breakdown (Max):
140V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
1W
Package / Case:
TO-205AA, TO-5-3 Metal Can
Current - Collector Cutoff (Max):
10µA
Manufacturer:
Microsemi IRE Division
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FAQs
Yes. You can also search 2N3634L on website for other similar products.
We accept all major payment methods for all products including ET18558905. Please check your shopping cart at the time of order.
You can order Microsemi IRE Division brand products with 2N3634L directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi IRE Division 2N3634L. You can also check on our website or by contacting our customer support team for further order details on Microsemi IRE Division 2N3634L.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET18558905 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi IRE Division" products on our website by using Enrgtech's Unique Manufacturing Part Number ET18558905.
Yes. We ship 2N3634L Internationally to many countries around the world.
This is manufactured by Microsemi IRE Division. The manufacturer part number is 2N3634L. It has typical 12 weeks of manufacturer standard lead time. The maximum collector current includes 1a. It features bipolar (bjt) transistor pnp 140v 1a 1w through hole to-5. Furthermore, 50 @ 50ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 600mv @ 5ma, 50ma is the maximum Vce saturation. to-5 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 140v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 1w. Moreover, the product comes in to-205aa, to-5-3 metal can. In addition, 10µa is the maximum current at collector cutoff. The microsemi ire division's product offers user-desired applications.
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