ON Semiconductor NSV60200SMTWTBG

ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
9 Weeks
Base Part Number:
NSV60200
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 2A 155MHz 1.8W Surface Mount 6-WDFN (2x2)
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 100mA, 2V
Transistor Type:
PNP
Frequency - Transition:
155MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
450mV @ 200mA, 2A
Supplier Device Package:
6-WDFN (2x2)
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1.8W
Customer Reference:
Package / Case:
6-WDFN Exposed Pad
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NSV60200SMTWTBG. It has typical 9 weeks of manufacturer standard lead time. Base Part Number: nsv60200. It features bipolar (bjt) transistor pnp 60v 2a 155mhz 1.8w surface mount 6-wdfn (2x2). Furthermore, 150 @ 100ma, 2v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 155mhz. The product is available in surface mount configuration. The 450mv @ 200ma, 2a is the maximum Vce saturation. 6-wdfn (2x2) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1.8w. Moreover, the product comes in 6-wdfn exposed pad. The maximum collector current includes 2a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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NSV60200SMT(Datasheets)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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