Transistor Type:
NPN
Dimensions:
6.73 x 6.22 x 2.38mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Saturation Voltage:
1 V dc
Maximum Collector Base Voltage:
10 V dc
Maximum Collector Emitter Voltage:
80 V
Maximum Base Emitter Saturation Voltage:
1.5 V dc
Maximum Operating Frequency:
20 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum DC Collector Current:
8 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
51 Weeks
Base Part Number:
NJVMJD44
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 8A 85MHz 1.75W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 2A, 1V
Transistor Type:
NPN
Frequency - Transition:
85MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1V @ 400mA, 8A
Series:
Automotive, AEC-Q101
Supplier Device Package:
DPAK
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1.75W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
1µA
Manufacturer:
ON Semiconductor
