Minimum DC Current Gain:
30
Transistor Type:
PNP
Maximum Collector Base Voltage:
-40 V
Mounting Type:
Surface Mount
Maximum Power Dissipation:
350 mW
Maximum Collector Emitter Saturation Voltage:
-0.4 V
Maximum Collector Emitter Voltage:
40 V
Maximum Base Emitter Saturation Voltage:
-0.95 V
Maximum Emitter Base Voltage:
-5 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum DC Collector Current:
200 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
MMBT3906
Detailed Description:
Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 350mW Surface Mount SOT-23-3
Transistor Type:
PNP
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 50mA
Supplier Device Package:
SOT-23-3
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
350mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 1V
Manufacturer:
ON Semiconductor
