Manufacturer Standard Lead Time:
30 Weeks
Current - Collector (Ic) (Max):
12A
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100V 12A 100W Through Hole TO-254AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 6A, 3V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 120mA, 12A
Series:
Military, MIL-PRF-19500/624
Package / Case:
TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package:
TO-254AA
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
100W
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
1mA
Manufacturer:
Microsemi Corporation
This is manufactured by Microsemi Corporation. The manufacturer part number is JANTX2N7370. It has typical 30 weeks of manufacturer standard lead time. The maximum collector current includes 12a. It features bipolar (bjt) transistor npn - darlington 100v 12a 100w through hole to-254aa. Furthermore, 1000 @ 6a, 3v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The product is available in through hole configuration. The 3v @ 120ma, 12a is the maximum Vce saturation. The product military, mil-prf-19500/624, is a highly preferred choice for users. Moreover, the product comes in to-254-3, to-254aa (straight leads). to-254aa is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 100w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 1ma is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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