Manufacturer Standard Lead Time:
40 Weeks
Current - Collector (Ic) (Max):
500mA
Detailed Description:
Bipolar (BJT) Transistor NPN 100V 500mA Through Hole TO-5
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
600mV @ 30mA, 300mA
Series:
Military, MIL-PRF-19500/366
Package / Case:
TO-205AA, TO-5-3 Metal Can
Supplier Device Package:
TO-5
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max):
10µA (ICBO)
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Manufacturer:
Microsemi Corporation
This is manufactured by Microsemi Corporation. The manufacturer part number is JANS2N3499L. It has typical 40 weeks of manufacturer standard lead time. The maximum collector current includes 500ma. It features bipolar (bjt) transistor npn 100v 500ma through hole to-5. The transistor is a npn type. The product is available in through hole configuration. The 600mv @ 30ma, 300ma is the maximum Vce saturation. The product military, mil-prf-19500/366, is a highly preferred choice for users. Moreover, the product comes in to-205aa, to-5-3 metal can. to-5 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. In addition, 10µa (icbo) is the maximum current at collector cutoff. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The microsemi corporation's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.