Manufacturer Standard Lead Time:
30 Weeks
Current - Collector (Ic) (Max):
5A
Detailed Description:
Bipolar (BJT) Transistor PNP 80V 5A 4W Through Hole TO-254AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 2.5A, 5V
Transistor Type:
PNP
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 500mA, 5A
Series:
Military, MIL-PRF-19500/612
Package / Case:
TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package:
TO-254AA
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
4W
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
50µA
Manufacturer:
Microsemi Corporation
This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N7372. It has typical 30 weeks of manufacturer standard lead time. The maximum collector current includes 5a. It features bipolar (bjt) transistor pnp 80v 5a 4w through hole to-254aa. Furthermore, 70 @ 2.5a, 5v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 1.5v @ 500ma, 5a is the maximum Vce saturation. The product military, mil-prf-19500/612, is a highly preferred choice for users. Moreover, the product comes in to-254-3, to-254aa (straight leads). to-254aa is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 4w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 50µa is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.