Microsemi Corporation JAN2N6250
Product Information
Base Part Number:
2N6250
Detailed Description:
Bipolar (BJT) Transistor NPN 275V 10A 6W Through Hole TO-3 (TO-204AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
8 @ 10A, 3V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 1.25A, 10A
Series:
Military, MIL-PRF-19500/510
Package / Case:
TO-3
Supplier Device Package:
TO-3 (TO-204AA)
Voltage - Collector Emitter Breakdown (Max):
275V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
6W
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
Microsemi Corporation
Checking for live stock
FAQs
Yes. You can also search JAN2N6250 on website for other similar products.
We accept all major payment methods for all products including ET16027189. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with JAN2N6250 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single Bipolar Transistors category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation JAN2N6250. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation JAN2N6250.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16027189 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16027189.
Yes. We ship JAN2N6250 Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N6250. Base Part Number: 2n6250. It features bipolar (bjt) transistor npn 275v 10a 6w through hole to-3 (to-204aa). Furthermore, 8 @ 10a, 3v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 1.5v @ 1.25a, 10a is the maximum Vce saturation. The product military, mil-prf-19500/510, is a highly preferred choice for users. Moreover, the product comes in to-3. to-3 (to-204aa) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 275v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 6w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. The maximum collector current includes 10a. In addition, 1ma is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.