Microsemi Corporation JAN2N1485
Product Information
Current - Collector (Ic) (Max):
3A
Detailed Description:
Bipolar (BJT) Transistor NPN 40V 3A 1.75W Through Hole TO-8
DC Current Gain (hFE) (Min) @ Ic, Vce:
35 @ 750mA, 4V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
750mV @ 40mA, 750mA
Series:
Military, MIL-PRF-19500/207
Package / Case:
TO-233AA, TO-8-3 Lens Top Metal Can
Supplier Device Package:
TO-8
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
1.75W
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
15µA (ICBO)
Manufacturer:
Microsemi Corporation
Checking for live stock
FAQs
Yes. You can also search JAN2N1485 on website for other similar products.
We accept all major payment methods for all products including ET16027107. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with JAN2N1485 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation JAN2N1485. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation JAN2N1485.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16027107 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16027107.
Yes. We ship JAN2N1485 Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N1485. The maximum collector current includes 3a. It features bipolar (bjt) transistor npn 40v 3a 1.75w through hole to-8. Furthermore, 35 @ 750ma, 4v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 750mv @ 40ma, 750ma is the maximum Vce saturation. The product military, mil-prf-19500/207, is a highly preferred choice for users. Moreover, the product comes in to-233aa, to-8-3 lens top metal can. to-8 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 1.75w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 15µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.