Microsemi Corporation 2N6677
Product Information
Manufacturer Standard Lead Time:
8 Weeks
Current - Collector (Ic) (Max):
15A
Detailed Description:
Bipolar (BJT) Transistor NPN 350V 15A 3MHz 175W Through Hole TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
8 @ 15A, 3V
Transistor Type:
NPN
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 3A, 15A
Supplier Device Package:
TO-3
Voltage - Collector Emitter Breakdown (Max):
350V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
175W
Customer Reference:
Package / Case:
TO-204AA, TO-3
Current - Collector Cutoff (Max):
100µA
Manufacturer:
Microsemi Corporation
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FAQs
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You can order Microsemi Corporation brand products with 2N6677 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation 2N6677. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation 2N6677.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16023879 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16023879.
Yes. We ship 2N6677 Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is 2N6677. It has typical 8 weeks of manufacturer standard lead time. The maximum collector current includes 15a. It features bipolar (bjt) transistor npn 350v 15a 3mhz 175w through hole to-3. Furthermore, 8 @ 15a, 3v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 3mhz. The product is available in through hole configuration. The 1.5v @ 3a, 15a is the maximum Vce saturation. to-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 350v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 175w. Moreover, the product comes in to-204aa, to-3. In addition, 100µa is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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