Rohm Semiconductor 2SD1866TV2

2SD1866TV2 Rohm Semiconductor
Rohm Semiconductor

Product Information

Current - Collector (Ic) (Max):
2A
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 60V 2A 1W Through Hole ATV
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 1A, 2V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 1mA, 1A
Supplier Device Package:
ATV
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tape & Box (TB)
Operating Temperature:
150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
3-SIP
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is 2SD1866TV2. The maximum collector current includes 2a. It features bipolar (bjt) transistor npn - darlington 60v 2a 1w through hole atv. Furthermore, 1000 @ 1a, 2v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The product is available in through hole configuration. The 1.5v @ 1ma, 1a is the maximum Vce saturation. atv is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, tape & box (tb) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 1w. Moreover, the product comes in 3-sip. In addition, 1µa (icbo) is the maximum current at collector cutoff. The rohm semiconductor's product offers user-desired applications.

pdf icon
2SD2212, 2134, 1866(Datasheets)

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