Toshiba Semiconductor and Storage 2SB1457,T6YMEF(M
Product Information
Current - Collector (Ic) (Max):
2 A
HTSUS:
8541.21.0095
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 Long Body
DC Current Gain (hFE) (Min) @ Ic, Vce:
2000 @ 1A, 2V
Frequency - Transition:
50MHz
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 1mA, 1A
Voltage - Collector Emitter Breakdown (Max):
100 V
Transistor Type:
PNP
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
10µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92MOD
Power - Max:
900 mW
Base Product Number:
2SB1457
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SB1457,T6YMEF(M. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.21.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body. Furthermore, 2000 @ 1a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 50mhz. The 1.5v @ 1ma, 1a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 100 v. The transistor is a pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 10µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92mod is the supplier device package value. The maximum power of the product is 900 mw. Moreover, it corresponds to 2sb1457, a base product number of the product. The product is designated with the ear99 code number.
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