Toshiba Semiconductor and Storage 2SA1930,ONKQ(J

2SA1930-ONKQ-J Toshiba Semiconductor and Storage 2SA1930,ONKQ(J
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
2 A
HTSUS:
8541.29.0075
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 5V
Frequency - Transition:
200MHz
Vce Saturation (Max) @ Ib, Ic:
1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max):
180 V
Transistor Type:
PNP
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
5µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220NIS
Power - Max:
2 W
Base Product Number:
2SA1930
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1930,ONKQ(J. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.29.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Furthermore, 100 @ 100ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The 1v @ 100ma, 1a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 180 v. The transistor is a pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 5µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-220nis is the supplier device package value. The maximum power of the product is 2 w. Moreover, it corresponds to 2sa1930, a base product number of the product. The product is designated with the ear99 code number.

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2SA1930(Datasheets)

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