Minimum DC Current Gain:
10
Transistor Type:
NPN
Dimensions:
10.67 x 4.83 x 16.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Collector Emitter Saturation Voltage:
1 V
Maximum Collector Base Voltage:
350 V
Maximum Collector Emitter Voltage:
350 V
Maximum Base Emitter Saturation Voltage:
1.5 V
Maximum Operating Frequency:
1 MHz
Height:
16.51mm
Width:
4.83mm
Length:
10.67mm
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 A
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
TIP47
Detailed Description:
Bipolar (BJT) Transistor NPN 250V 1A 10MHz 2W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 300mA, 10V
Transistor Type:
NPN
Frequency - Transition:
10MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 200mA, 1A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
250V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
