Minimum DC Current Gain:
15
Transistor Type:
NPN
Dimensions:
10.67 x 4.83 x 16.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
30 W
Maximum Collector Emitter Saturation Voltage:
0.7 V
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
1.3 V
Height:
16.51mm
Width:
4.83mm
Length:
10.67mm
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 A
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
TIP29
Detailed Description:
Bipolar (BJT) Transistor NPN 100V 1A 3MHz 2W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 1A, 4V
Transistor Type:
NPN
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
700mV @ 125mA, 1A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
300µA
Manufacturer:
ON Semiconductor
