Minimum DC Current Gain:
500
Transistor Type:
PNP
Dimensions:
10.67 x 4.83 x 16.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
80 W
Maximum Continuous Collector Current:
-10 A
Maximum Collector Base Voltage:
-100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
-3.5 V
Maximum Collector Cut-off Current:
-1mA
Height:
16.51mm
Width:
4.83mm
Length:
10.67mm
Package Type:
TO-220
Number of Elements per Chip:
2
Maximum Collector Emitter Saturation Voltage:
-2 V
Maximum Emitter Base Voltage:
-5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
8 Weeks
Base Part Number:
TIP147
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 100V 10A 80W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 5A, 4V
Transistor Type:
PNP - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 40mA, 10A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
80W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
2mA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is TIP147TTU. It features up to 500 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 10.67 x 4.83 x 16.51mm. The product is available in through hole configuration. Provides up to 80 w maximum power dissipation. The product has a maximum -10 a continuous collector current . Additionally, it has -100 v maximum collector base voltage. Whereas features a 100 v of collector emitter voltage (max). In addition, the product has a maximum -3.5 v base emitter saturation voltage . It has a maximum -1ma collector cut-off current . In addition, the height is 16.51mm. Furthermore, the product is 4.83mm wide. Its accurate length is 10.67mm. The package is a sort of to-220. It consists of 2 elements per chip. The product has a maximum -2 v collector emitter saturation voltage . It features a -5 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 8 weeks of manufacturer standard lead time. Base Part Number: tip147. It features bipolar (bjt) transistor pnp - darlington 100v 10a 80w through hole to-220-3. Furthermore, 1000 @ 5a, 4v is the minimum DC current gain at given voltage. The transistor is a pnp - darlington type. The 3v @ 40ma, 10a is the maximum Vce saturation. to-220-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 80w. Moreover, the product comes in to-220-3. The maximum collector current includes 10a. In addition, 2ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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