Minimum DC Current Gain:
10000
Transistor Type:
PNP
Maximum Collector Base Voltage:
-30 V
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1 W
Maximum Continuous Collector Current:
-1.2 A
Maximum Collector Emitter Voltage:
30 V
Maximum Base Emitter Saturation Voltage:
-2 V
Maximum Collector Cut-off Current:
-100nA
Maximum Emitter Base Voltage:
-10 V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
-1.5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
9 Weeks
Base Part Number:
PZTA64
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 30V 1.2A 125MHz 1W Surface Mount SOT-223-4
DC Current Gain (hFE) (Min) @ Ic, Vce:
20000 @ 100mA, 5V
Transistor Type:
PNP - Darlington
Frequency - Transition:
125MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 100µA, 100mA
Supplier Device Package:
SOT-223-4
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-261-4, TO-261AA
Current - Collector (Ic) (Max):
1.2A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
