Dimensions:
6.5 x 3.56 x 1.6mm
Maximum Collector Emitter Saturation Voltage:
1.5 V
Maximum Collector Cut-off Current:
500nA
Width:
3.56mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
800 mA
Package Type:
SOT-223
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
80 V
Maximum Base Emitter Saturation Voltage:
2 V
Maximum Emitter Base Voltage:
12 V
Length:
6.5mm
Pin Count:
3 + Tab
Minimum DC Current Gain:
10000
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1 W
Maximum Collector Emitter Voltage:
80 V
Height:
1.6mm
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
11 Weeks
Base Part Number:
PZTA28
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 80V 800mA 125MHz 1W Surface Mount SOT-223-4
DC Current Gain (hFE) (Min) @ Ic, Vce:
10000 @ 100mA, 5V
Transistor Type:
NPN - Darlington
Frequency - Transition:
125MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 100µA, 100mA
Supplier Device Package:
SOT-223-4
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-261-4, TO-261AA
Current - Collector (Ic) (Max):
800mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
