ON Semiconductor NSCT817-40LT1G
Product Information
Base Part Number:
NSCT81
Detailed Description:
Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 225mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
250 @ 100mA, 1V
Transistor Type:
NPN
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
700mV @ 50mA, 500mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
45V
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
225mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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Yes. We ship NSCT817-40LT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NSCT817-40LT1G. Base Part Number: nsct81. It features bipolar (bjt) transistor npn 45v 100ma 100mhz 225mw surface mount sot-23-3 (to-236). Furthermore, 250 @ 100ma, 1v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 100mhz. The product is available in surface mount configuration. The 700mv @ 50ma, 500ma is the maximum Vce saturation. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 45v. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 225mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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