Dimensions:
5.2 x 4.19 x 5.33mm
Maximum Collector Emitter Saturation Voltage:
-0.5 V dc
Width:
4.19mm
Transistor Configuration:
Single
Maximum Operating Frequency:
20 MHz
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
-300 V dc
Maximum Base Emitter Saturation Voltage:
-0.9 V dc
Maximum Emitter Base Voltage:
-5 V
Length:
5.2mm
Maximum DC Collector Current:
500 mA
Pin Count:
3
Minimum DC Current Gain:
25
Mounting Type:
Through Hole
Maximum Power Dissipation:
1 W
Maximum Collector Emitter Voltage:
300 V
Height:
5.33mm
Minimum Operating Temperature:
-55 °C
Base Part Number:
MPSW92
Detailed Description:
Bipolar (BJT) Transistor PNP 300V 500mA 50MHz 1W Through Hole TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce:
25 @ 30mA, 10V
Transistor Type:
PNP
Frequency - Transition:
50MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 2mA, 20mA
Supplier Device Package:
TO-92 (TO-226)
Voltage - Collector Emitter Breakdown (Max):
300V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 Long Body (Formed Leads)
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
250nA (ICBO)
Manufacturer:
ON Semiconductor
