Transistor Type:
PNP
Dimensions:
5.21 x 4.19 x 7.87mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
2.5 W
Maximum Collector Emitter Saturation Voltage:
-0.5 V dc
Maximum Collector Base Voltage:
-80 V dc
Maximum Collector Emitter Voltage:
80 V
Maximum Operating Frequency:
50 (Min.) MHz
Maximum Emitter Base Voltage:
-4 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
500 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
MPSW56
Detailed Description:
Bipolar (BJT) Transistor PNP 80V 500mA 50MHz 1W Through Hole TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 250mA, 1V
Transistor Type:
PNP
Frequency - Transition:
50MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 10mA, 250mA
Supplier Device Package:
TO-92 (TO-226)
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 Long Body (Formed Leads)
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
