ON Semiconductor MPSW13RLRAG

ON Semiconductor

Product Information

Base Part Number:
MPSW13
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 30V 1A 125MHz 1W Through Hole TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce:
10000 @ 100mA, 5V
Transistor Type:
NPN - Darlington
Frequency - Transition:
125MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 100µA, 100mA
Supplier Device Package:
TO-92 (TO-226)
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 Long Body (Formed Leads)
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MPSW13RLRAG. Base Part Number: mpsw13. It features bipolar (bjt) transistor npn - darlington 30v 1a 125mhz 1w through hole to-92 (to-226). Furthermore, 10000 @ 100ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The transition frequency of the product is 125mhz. The product is available in through hole configuration. The 1.5v @ 100µa, 100ma is the maximum Vce saturation. to-92 (to-226) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1w. Moreover, the product comes in to-226-3, to-92-3 long body (formed leads). The maximum collector current includes 1a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 21/Jan/2010(PCN Obsolescence/ EOL)
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MPSW13(Datasheets)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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