This is manufactured by ON Semiconductor. The manufacturer part number is MPSA42RLRFG. Base Part Number: mpsa42. It features bipolar (bjt) transistor npn 300v 500ma 50mhz 625mw through hole to-92-3. Furthermore, 25 @ 1ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 50mhz. The product is available in through hole configuration. The 500mv @ 2ma, 20ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 300v. In addition, tape & box (tb) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 500ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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This is manufactured by ON Semiconductor. The manufacturer part number is MPSA42RLRFG. Base Part Number: mpsa42. It features bipolar (bjt) transistor npn 300v 500ma 50mhz 625mw through hole to-92-3. Furthermore, 25 @ 1ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 50mhz. The product is available in through hole configuration. The 500mv @ 2ma, 20ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 300v. In addition, tape & box (tb) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 500ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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