ON Semiconductor MPS6601RLRAG

ON Semiconductor

Product Information

Base Part Number:
MPS660
Detailed Description:
Bipolar (BJT) Transistor NPN 25V 1A 100MHz 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 500mA, 1V
Transistor Type:
NPN
Frequency - Transition:
100MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
600mV @ 100mA, 1A
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
25V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
100nA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MPS6601RLRAG. Base Part Number: mps660. It features bipolar (bjt) transistor npn 25v 1a 100mhz 625mw through hole to-92-3. Furthermore, 50 @ 500ma, 1v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 100mhz. The product is available in through hole configuration. The 600mv @ 100ma, 1a is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 25v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 1a. In addition, 100na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 14/Apr/2010(PCN Obsolescence/ EOL)
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MPS6601,02,51,52(Datasheets)

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