Dimensions:
2.92 x 1.3 x 0.93mm
Maximum Collector Emitter Saturation Voltage:
0.25 V
Width:
1.3mm
Transistor Configuration:
Single
Maximum Operating Frequency:
50 MHz
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
160 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Emitter Base Voltage:
6 V
Length:
2.92mm
Maximum DC Collector Current:
600 mA
Pin Count:
3
Minimum DC Current Gain:
20
Mounting Type:
Surface Mount
Maximum Power Dissipation:
350 mW
Maximum Collector Emitter Voltage:
140 V
Height:
0.93mm
Minimum Operating Temperature:
-55 °C
Base Part Number:
MMBT5550
Detailed Description:
Bipolar (BJT) Transistor NPN 140V 600mA 50MHz 350mW Surface Mount SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 10mA, 5V
Transistor Type:
NPN
Frequency - Transition:
50MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
250mV @ 5mA, 50mA
Supplier Device Package:
SOT-23-3
Voltage - Collector Emitter Breakdown (Max):
140V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
350mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
600mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
