Minimum DC Current Gain:
20
Transistor Type:
NPN
Dimensions:
2.9 x 1.3 x 0.97mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
350 mW
Maximum Collector Emitter Saturation Voltage:
0.25 V
Maximum Collector Base Voltage:
40 V
Maximum Collector Emitter Voltage:
15 V
Maximum Base Emitter Saturation Voltage:
0.85 V
Height:
0.97mm
Width:
1.3mm
Length:
2.9mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum DC Collector Current:
200 mA
Maximum Emitter Base Voltage:
4.5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
MMBT2369
Detailed Description:
Bipolar (BJT) Transistor NPN 15V 200mA 225mW Surface Mount SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 10mA, 1V
Transistor Type:
NPN
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
500mV @ 10mA, 100mA
Supplier Device Package:
SOT-23-3
Voltage - Collector Emitter Breakdown (Max):
15V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
225mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
200mA
Current - Collector Cutoff (Max):
400nA (ICBO)
Manufacturer:
ON Semiconductor
