ON Semiconductor MJE5730

ON Semiconductor

Product Information

Base Part Number:
MJE57
Detailed Description:
Bipolar (BJT) Transistor PNP 300V 1A 10MHz 40W Through Hole TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 300mA, 10V
Transistor Type:
PNP
Frequency - Transition:
10MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 200mA, 1A
Supplier Device Package:
TO-220
Voltage - Collector Emitter Breakdown (Max):
300V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
40W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJE5730. Base Part Number: mje57. It features bipolar (bjt) transistor pnp 300v 1a 10mhz 40w through hole to-220. Furthermore, 30 @ 300ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 10mhz. The product is available in through hole configuration. The 1v @ 200ma, 1a is the maximum Vce saturation. to-220 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 300v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 40w. Moreover, the product comes in to-220-3. The maximum collector current includes 1a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 30/Jun/2006(PCN Obsolescence/ EOL)
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MJE5730, 31(A)(Datasheets)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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