Minimum DC Current Gain:
5
Transistor Type:
NPN
Dimensions:
9.9 x 4.5 x 14.2mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
75 W
Maximum Collector Emitter Saturation Voltage:
1.1 V
Maximum Collector Base Voltage:
70 V
Maximum Collector Emitter Voltage:
60 V
Height:
14.2mm
Width:
4.5mm
Length:
9.9mm
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
10 A
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
MJE3055
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 10A 2MHz 75W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 4V
Transistor Type:
NPN
Frequency - Transition:
2MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
8V @ 3.3A, 10A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
75W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
700µA
Manufacturer:
ON Semiconductor
