ON Semiconductor MJE13005G

ON Semiconductor

Product Information

Base Part Number:
MJE13
Detailed Description:
Bipolar (BJT) Transistor NPN 400V 4A 4MHz 2W Through Hole TO-220AB
Transistor Type:
NPN
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 1A, 4A
Series:
SWITCHMODE™
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
400V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
4A
DC Current Gain (hFE) (Min) @ Ic, Vce:
8 @ 2A, 5V
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJE13005G. Base Part Number: mje13. It features bipolar (bjt) transistor npn 400v 4a 4mhz 2w through hole to-220ab. The transistor is a npn type. The transition frequency of the product is 4mhz. The product is available in through hole configuration. The 1v @ 1a, 4a is the maximum Vce saturation. The product switchmode™, is a highly preferred choice for users. to-220ab is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 400v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 2w. Moreover, the product comes in to-220-3. The maximum collector current includes 4a. Furthermore, 8 @ 2a, 5v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.

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Multiple Devices 30/Sept/2011(PCN Obsolescence/ EOL)
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MJE13005(Datasheets)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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