ON Semiconductor MJD45H11-001

ON Semiconductor

Product Information

Base Part Number:
MJD45
Detailed Description:
Bipolar (BJT) Transistor PNP 80V 8A 90MHz 1.75W Through Hole I-PAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 4A, 1V
Transistor Type:
PNP
Frequency - Transition:
90MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 400mA, 8A
Supplier Device Package:
I-PAK
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1.75W
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
1µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJD45H11-001. Base Part Number: mjd45. It features bipolar (bjt) transistor pnp 80v 8a 90mhz 1.75w through hole i-pak. Furthermore, 40 @ 4a, 1v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 90mhz. The product is available in through hole configuration. The 1v @ 400ma, 8a is the maximum Vce saturation. i-pak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1.75w. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The maximum collector current includes 8a. In addition, 1µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 06/Oct/2006(PCN Obsolescence/ EOL)
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MJD44H11, MJD45H11(Datasheets)

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