Minimum DC Current Gain:
40
Transistor Type:
NPN
Dimensions:
6.6 x 6.1 x 2.3mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Saturation Voltage:
1 V
Maximum Collector Base Voltage:
10 V
Maximum Collector Emitter Voltage:
80 V
Maximum Operating Frequency:
1 MHz
Height:
2.3mm
Width:
6.1mm
Length:
6.6mm
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum DC Collector Current:
8 A
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
MJD44
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 8A 50MHz 1.75W Surface Mount TO-252-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 4A, 1V
Transistor Type:
NPN
Frequency - Transition:
50MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1V @ 400mA, 8A
Supplier Device Package:
TO-252-3
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
1.75W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
10µA
Manufacturer:
ON Semiconductor
