ON Semiconductor MJ14001G

ON Semiconductor

Product Information

Base Part Number:
MJ140
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 60A 300W Through Hole TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 50A, 3V
Transistor Type:
PNP
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 12A, 60A
Supplier Device Package:
TO-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tray
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
300W
Customer Reference:
Package / Case:
TO-204AE
Current - Collector (Ic) (Max):
60A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJ14001G. Base Part Number: mj140. It features bipolar (bjt) transistor pnp 60v 60a 300w through hole to-3. Furthermore, 15 @ 50a, 3v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 3v @ 12a, 60a is the maximum Vce saturation. to-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, tray is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 300w. Moreover, the product comes in to-204ae. The maximum collector current includes 60a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 14/Apr/2010(PCN Obsolescence/ EOL)
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MJ14001,2,3(Datasheets)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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