ON Semiconductor KSP42TA
Product Information
Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Emitter Saturation Voltage:
0.5 V
Maximum Collector Base Voltage:
300 V
Maximum Collector Emitter Voltage:
300 V
Maximum Base Emitter Saturation Voltage:
0.9 V
Maximum Emitter Base Voltage:
6 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
500 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
KSP42
Detailed Description:
Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 30mA, 10V
Transistor Type:
NPN
Frequency - Transition:
50MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 2mA, 20mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
300V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor KSP42TA. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor KSP42TA.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14527584 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14527584.
Yes. We ship KSP42TA Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is KSP42TA. The transistor is a npn type. The given dimensions of the product include 4.58 x 3.86 x 4.58mm. The product is available in through hole configuration. Provides up to 625 mw maximum power dissipation. The product has a maximum 0.5 v collector emitter saturation voltage . Additionally, it has 300 v maximum collector base voltage. Whereas features a 300 v of collector emitter voltage (max). In addition, the product has a maximum 0.9 v base emitter saturation voltage . It features a 6 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 500 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: ksp42. It features bipolar (bjt) transistor npn 300v 500ma 50mhz 625mw through hole to-92-3. Furthermore, 40 @ 30ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 50mhz. The 500mv @ 2ma, 20ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 300v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 500ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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