Minimum DC Current Gain:
35
Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Emitter Saturation Voltage:
1 V
Maximum Collector Base Voltage:
75 V
Maximum Collector Emitter Voltage:
40 V
Maximum Base Emitter Saturation Voltage:
2 V
Maximum Operating Frequency:
100 MHz
Height:
4.58mm
Width:
3.86mm
Length:
4.58mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
600 mA
Maximum Emitter Base Voltage:
6 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
KSP22
Detailed Description:
Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10mV
Transistor Type:
NPN
Frequency - Transition:
300MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
600mA
Current - Collector Cutoff (Max):
10nA (ICBO)
Manufacturer:
ON Semiconductor
