Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Emitter Saturation Voltage:
1 V
Maximum Collector Base Voltage:
75 V
Maximum Collector Emitter Voltage:
40 V
Maximum Base Emitter Saturation Voltage:
2 V
Maximum Emitter Base Voltage:
6 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
600 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
36 Weeks
Base Part Number:
KSP22
Detailed Description:
Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Transistor Type:
NPN
Frequency - Transition:
300MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
600mA
Current - Collector Cutoff (Max):
10nA (ICBO)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is KSP2222ABU. The transistor is a npn type. The given dimensions of the product include 4.58 x 3.86 x 4.58mm. The product is available in through hole configuration. Provides up to 625 mw maximum power dissipation. The product has a maximum 1 v collector emitter saturation voltage . Additionally, it has 75 v maximum collector base voltage. Whereas features a 40 v of collector emitter voltage (max). In addition, the product has a maximum 2 v base emitter saturation voltage . It features a 6 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 600 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 36 weeks of manufacturer standard lead time. Base Part Number: ksp22. It features bipolar (bjt) transistor npn 40v 600ma 300mhz 625mw through hole to-92-3. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 300mhz. The 1v @ 50ma, 500ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 600ma. In addition, 10na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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