This is manufactured by ON Semiconductor. The manufacturer part number is KSP13TA. Base Part Number: ksp13. It features bipolar (bjt) transistor npn - darlington 30v 500ma 125mhz 625mw through hole to-92-3. Furthermore, 10000 @ 100ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The transition frequency of the product is 125mhz. The product is available in through hole configuration. The 1.5v @ 100µa, 100ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 500ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
Mult Dev Assembly Chgs 17/Nov/2020(PCN Assembly/Origin)
KSP13,14(Datasheets)
Copper Lead Frame 12/Oct/2007(PCN Design/Specification)
Logo 17/Aug/2017(PCN Design/Specification)
Mult Devices 24/Oct/2017(PCN Packaging)
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14527563 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14527563.
Yes. We ship KSP13TA Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is KSP13TA. Base Part Number: ksp13. It features bipolar (bjt) transistor npn - darlington 30v 500ma 125mhz 625mw through hole to-92-3. Furthermore, 10000 @ 100ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The transition frequency of the product is 125mhz. The product is available in through hole configuration. The 1.5v @ 100µa, 100ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 500ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.