Minimum DC Current Gain:
40
Transistor Type:
PNP
Dimensions:
6.6 x 2.3 x 6.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Saturation Voltage:
-1 V
Maximum Collector Base Voltage:
-10 V
Maximum Collector Emitter Voltage:
80 V
Maximum Operating Frequency:
1 MHz
Height:
6.1mm
Width:
2.3mm
Length:
6.6mm
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Maximum DC Collector Current:
8 A
Maximum Emitter Base Voltage:
-5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
KSH45
Detailed Description:
Bipolar (BJT) Transistor PNP 80V 8A 40MHz 1.75W Through Hole I-PAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 4A, 1V
Transistor Type:
PNP
Frequency - Transition:
40MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 400mA, 8A
Supplier Device Package:
I-PAK
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
1.75W
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
10µA
Manufacturer:
ON Semiconductor
