Transistor Type:
NPN
Dimensions:
8 x 3.25 x 11mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Collector Base Voltage:
700 V
Maximum Collector Emitter Voltage:
400 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Emitter Base Voltage:
9 V
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
1.5 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
18 Weeks
Base Part Number:
KSE13003
Detailed Description:
Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 20W Through Hole TO-126-3
Transistor Type:
NPN
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 500mA, 1.5A
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
400V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
20W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce:
14 @ 500mA, 2V
Manufacturer:
ON Semiconductor
