Minimum DC Current Gain:
120
Transistor Type:
NPN
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
800 mW
Maximum Collector Emitter Saturation Voltage:
0.5 V
Maximum Collector Base Voltage:
40 V
Maximum Collector Emitter Voltage:
30 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Operating Frequency:
1 MHz
Height:
5.33mm
Width:
4.19mm
Length:
5.2mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 A
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
26 Weeks
Base Part Number:
KSD471
Detailed Description:
Bipolar (BJT) Transistor NPN 30V 1A 130MHz 800mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 100mA, 1V
Transistor Type:
NPN
Frequency - Transition:
130MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 100mA, 1A
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
800mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
